Search results for " char"
showing 10 items of 5267 documents
"Figure 11" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron $R_{dA}$ 60-88% $d$+Au collisions. The nuclear modification factor, $R_{dA}$, for electrons from open heavy flavor decays, for the (a) most central and (b) most peripheral centrality bins.
"Figure 8" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron RdA 0-20% $d$+Au collisions. The nuclear modification factor, $R_{dA}$, for electrons from open heavy flavor decays, for the (a) most central and (b) most peripheral centrality bins.
"Figure 9" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron $R_{dA}$ 20-40% $d$+Au collisions. The nuclear modification factor, $R_{dA}$, for electrons from open heavy flavor decays, for the (a) most central and (b) most peripheral centrality bins.
"Figure 7" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron $R_{dA}$ 0-100% d+Au collisions. The nuclear modification factors $R_{dA}$ and $R_{AA}$ for minimum bias $d$+Au and Au+Au collisions, for the $\pi^{0}$ and $e^{\pm}_{HF}$. The two boxes on the right side of the plot represent the global uncertainties in the $d$+Au (left) and Au+Au (right) values of $N_{coll}$ . An additional common global scaling uncertainty of 9.7% on $R_{dA}$ and $R_{AA}$ from the $p+p$ reference data is omitted for clarity.
"Figures 3-6" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron yield, $d$+Au $\implies$ CHARGED X. Electrons from heavy flavor decays, separated by centrality. The lines represent a fit to the previous $p+p$ result [23], scaled by $N_{coll}$. The inset shows the ratio of photonic background electrons determined by the converter and cocktail methods for Minimum Bias $d$+Au collisions, with error bars (boxes) that represent the statistical uncertainty on the converter data (systematic uncertainty on the photonic-electron cocktail).
"Figure 10" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron $R_{dA}$ 40-60% $d$+Au collisions. The nuclear modification factor, $R_{dA}$, for electrons from open heavy flavor decays, for the (a) most central and (b) most peripheral centrality bins.
"Figures 1-2" of "Cold-nuclear-matter effcts on heavy-quark production in d+Au collisions at sqrt(s_NN)=200 GeV"
2023
Heavy flavor electron yield, Run-8 $p$ + $p$, $d$+Au collisions. Electrons from heavy flavor decays, separated by centrality. The lines represent a fit to the previous $p+p$ result [23], scaled by $N_{coll}$. The inset shows the ratio of photonic background electrons determined by the converter and cocktail methods for Minimum Bias $d$+Au collisions, with error bars (boxes) that represent the statistical uncertainty on the converter data (systematic uncertainty on the photonic-electron cocktail).
Effect of space charge on the negative oxygen flux during reactive sputtering
2017
Negative ions often play a distinctive role in the phase formation during reactive sputter deposition. The path of these high energetic ions is often assumed to be straight. In this paper, it is shown that in the context of reactive magnetron sputtering space charge effects are decisive for the energetic negative ion trajectories. To investigate the effect of space charge spreading, reactive magnetron sputter experiments were performed in compound mode with target materials that are expected to have a high secondary ion emission yield (MgO and CeO2). By the combination of energy flux measurements, and simulations, a quantitative value for the negative oxygen ion yield can be derived.
Custom measurement system for memristor characterisation
2021
Abstract A cheap, compact and customisable characterisation system for memristor devices, working between ± 10 V, is presented. SPICE (Simulation Program with Integrated Circuit Emphasis) simulations are performed to verify the circuit feasibility and a proper software is developed to drive the system. The potentiality of the realised system is tested by performing several electrical measurements on both Cu/HfO2/Pt memristors and two-terminals commercial devices.
Partial discharges behavior under different rectified waveforms
2017
In this work, a previous software used to simulate partial discharges (PDs) under Alternating Current (AC) stress has been modified in order to evaluate the PDs behavior under a voltage stress close to the Direct Current (DC) waveform. By using a full-wave and a half-wave rectifier, the specimen with an air void defects has been subjected to a gradual constant stress. Finally, a capacitive filter has been inserted in order to produce a steadier voltage supply. Simulation results show that under an almost DC waveform, the PDs activity become less compared to AC stress.